High-Purity Pressureless Sintered SiC Crucible with 1800°C Resistance and 1650°C Service Temperature

Our pressureless sintered silicon carbide (SSiC) crucible is engineered for the most demanding high-temperature applications. Manufactured from ultra-high-purity SiC powder via advanced sintering technology, it delivers unmatched thermal performance and longevity. This crucible is the ideal solution for metal melting, advanced material synthesis, and any process requiring a container free from metallic contamination, offering superior resistance to thermal shock, corrosion, and extreme heat.

• Guaranteed Purity & Zero Contamination
  Crafted from ≥98% pure SiC with minimal sintering aids, our crucible ensures absolutely no metal ion introduction. This is critical for melting high-purity metals and producing advanced battery materials.
• Exceptional High-Temperature Performance
  With a maximum service temperature of 1650 °C in air and suitability for inert atmospheres up to 1800 °C, it significantly outperforms traditional alumina or quartz crucibles.
• Rapid Heating for Energy Savings
  High thermal conductivity (196 W/(m *K) at 20°C) enables fast heat transfer, drastically reducing melting cycles and process times to lower your energy costs.
• Superior Thermal Shock Resistance
  Withstands rapid temperature changes exceeding Δ T 350°C without cracking. Its low thermal expansion coefficient (4.0 * 10⁻⁶/K) ensures structural integrity during quick heating or cooling.
• Outstanding Mechanical Strength & Lifespan
  High Vickers hardness (2350 kg/mm ²) and flexural strength (320-400 MPa) provide excellent resistance to physical abrasion and mechanical stress, leading to a much longer service life and reduced replacement costs.

We specialize in providing fully customizable solutions. Our crucibles are formed and pressureless sintered at extreme temperatures (2000-2150°C), resulting in a fully dense, pore-free microstructure that guarantees consistent performance and reliability for your specific process requirements.