14*11 Pressureless Sintered SiC Roller

Product Overview: Seamless Pressureless Sintered Silicon Carbide (SSiC) Rods, OD 14 mm * ID 11 mm

This product is a hollow tube made of pressureless sintered silicon carbide (SSiC) with outer diameter 14 mm and inner diameter 11 mm. It is manufactured from high-purity SiC powder with composite sintering aids, followed by high-temperature pressureless densification sintering. The rods feature high density, precise dimensional accuracy, low thermal expansion, high thermal conductivity, excellent corrosion resistance, and thermal shock resistance. They can operate reliably for long periods in harsh conditions such as high temperature, corrosive atmospheres, abrasive environments, and high-purity processes. As a high-performance replacement for traditional alumina ceramics or reaction-bonded SiC rods, they are widely used for support, transmission, and heat conduction structures in precision high-temperature equipment.

The base material is high-purity pressureless sintered silicon carbide (SSiC). It is produced from ultrafine α-SiC powder with boron carbide and carbon-based eco-friendly sintering aids, densified under no external pressure. The material is free of free silicon, has no open pores, and exhibits a uniform, dense microstructure. It is a high-performance covalent bond ceramic with outstanding physicochemical stability.

The product is manufactured using a standardized, refined pressureless solid-state sintering process. No external mechanical pressure is applied throughout the process. Precise formulation and staged temperature control achieve full densification, ensuring high process consistency, product stability, and yield.

1. Precise Raw Material Batching and Mixing
   High-purity ultrafine SiC powder is selected and precisely mixed with B₄C and C composite sintering aids. High-energy ball milling homogenizes the mixture, thoroughly removing agglomerates and impurities to ensure uniform particle size and composition.
2. Vacuum Precision Extrusion Forming
   Dedicated Φ14/Φ11 mm hollow tube dies are used with a vacuum extrusion press to form green bodies. The roundness, wall thickness uniformity, and straightness are precisely controlled from the start.
3. Gradient Drying and Binder Removal
   A multi-step low-temperature gradient drying process slowly removes free moisture and organic binders, effectively preventing cracking, deformation, or delamination.
4. High-Temperature Pressureless Sintering in Inert Atmosphere
   The dried green bodies are placed in an inert-gas-protected sintering furnace and sintered at 1950–2100 °C under no external pressure. The sintering aids promote grain growth and interface densification.
5. High-Precision Finishing and Full Inspection
   Sintered blanks are precision ground and mirror-polished to accurately adjust core dimensions. Finished products undergo non-destructive testing, dimensional verification, pressure resistance testing, and visual inspection.

This product is a standardized, customizable hollow SiC rod. High dimensional accuracy and tight tolerances allow easy integration into various precision high-temperature equipment.

Compared to traditional high-temperature rods made of reaction-bonded SiC, alumina ceramics, or quartz ceramics, this pressureless sintered SiC rod offers significant advantages in densification, mechanical properties, thermal stability, and corrosion resistance.

1. Fully Dense, Defect-Free Structure
   Pressureless solid-state sintering eliminates residual free silicon and internal pores, achieving much higher densification than conventional reaction-bonded SiC.
2. High Strength, Wear Resistance, and Resistance to Thermal Deformation
   Vickers hardness ≥2000 HV, three-point flexural strength ≥350 MPa. No softening, bending, or wear under high temperatures.
3. High Thermal Conductivity for Energy Saving and Uniform Thermal Field
   Thermal conductivity ≥120 W/(m·K) at room temperature. Efficient heat transfer equalizes the temperature field inside equipment.
4. Excellent Thermal Shock Resistance
   Combined low thermal expansion coefficient and high density enable resistance to frequent thermal cycling between room temperature and 1500 °C.
5. High Purity, Corrosion Resistance, and No Product Contamination
   Made from high-purity raw materials without metallic conductive impurities. Resists strong corrosive media.
6. Lightweight, High Precision, Low Inertia
   Hollow lightweight design reduces equipment inertia. High dimensional accuracy and consistency allow precise mounting.

Leveraging its small size, high precision, high temperature resistance, strong corrosion resistance, and high thermal conductivity, this product is particularly suitable for compact precision high-temperature equipment, high-purity processes, and fine corrosive environments.

• Precision Ceramics – Used as transmission, load-bearing, and support components in small sintering kilns, pusher kilns, and laboratory furnaces for electronic ceramics, structural ceramics, and functional fine ceramics.
• New Energy and Electronics – Suitable for high-temperature annealing, sintering, and curing equipment for lithium battery cathode/anode materials, ceramic substrates, and semiconductor components.
• Chemical High-Temperature Applications – Used as heat exchanger flow guides, equipment supports, and positioning components in high-temperature heat exchangers and reactors.
• Research and Laboratory – Widely used as specimen supports, temperature measurement aids, and positioning structures in tube furnaces, atmosphere furnaces, and vacuum high-temperature furnaces.
• Glass and Metallurgy – Applied in small glass annealing furnaces and precious metal micro-melting equipment, offering excellent resistance to metal melt adhesion and high-temperature corrosion.

Pressureless sintered silicon carbide maintains stable performance across high and low temperatures without degradation or structural failure. Its comprehensive properties are at the advanced level in the industry.

For further information or to discuss your specific needs, please contact us directly.