εταιρικά νέα για SSiC vs Reaction Bonded SiC (RB-SiC): Which One Performs Better at High Temperature?

Pressureless sintered silicon carbide (SSiC) and reaction bonded silicon carbide (RB-SiC) are both widely used in high-temperature industries.

However, their performance differs significantly due to fundamental structural differences.

RB-SiC contains residual free silicon.

At high temperature or in corrosive environments:

• Free Si oxidizes first
• Free Si reacts with chemicals (acid / alkali / lithium)
• Leads to structural degradation

SSiC avoids this completely.

• SSiC: Stable up to ~1600°C
• RB-SiC: Strength decreases due to Si softening

• RB-SiC: Vulnerable (free Si)
• SSiC: Excellent (dense + pure SiC)

• RB-SiC: Medium
• SSiC: Long-term stable

In kiln applications:

• RB-SiC → deformation + corrosion over time
• SSiC → stable structure, lower maintenance

Use SSiC when:

• Temperature > 1400°C
• Corrosive atmosphere exists
• Long service life is required

The core difference is:

Free Silicon vs Dense SiC Structure

For demanding environments, SSiC is the more reliable choice.