10-11mm Pressureless Sintered Silicon Carbide Grinding Balls

Name: 10-11mm Pressureless Sintered Silicon Carbide Grinding Balls
Brand: Shaanxi KeGu New Material Technology Co., Ltd
SKU: Customizable
Availability: InStock

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NGK values our long-standing partnership with Shaanxi Kegu. Their SSiC ceramics excel in quality and innovation, driving our mutual success. Here’s to continued collaboration!

—— NGK Thermal Technology Co.,Ltd

At Huike, we take pride in our long-standing partnership with Shaanxi Kegu New Material Technology Co., Ltd., a collaboration rooted in trust, innovation, and shared excellence.Their expertise in SSiC ceramics and reliable solutions have consistently supported our projects.

—— SuzhouHuike Technology Co.,Ltd

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—— Keda Industrial Group Co.,Ltd.

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10-11mm Pressureless Sintered Silicon Carbide Grinding Balls

Large Image : 10-11mm Pressureless Sintered Silicon Carbide Grinding Balls

Product Details:

Place of Origin:	China
Brand Name:	KEGU
Model Number:	Customizable

Payment & Shipping Terms:

Minimum Order Quantity:	Negotiable
Price:	Negotiable
Packaging Details:	Strong wooden box for Global shipping
Delivery Time:	Negotiable
Payment Terms:	L/C,D/A,D/P,T/T,Western Union,MoneyGram

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10-11mm Pressureless Sintered Silicon Carbide Grinding Balls

Description

Highlight:

Pressureless Sintered Silicon Carbide Grinding Balls

11mm Silicon Carbide Grinding Balls

10-11mm Pressureless Sintered Silicon Carbide Grinding Balls

Product Overview

Pressureless sintered silicon carbide (SiC) grinding balls are precision ceramic grinding media manufactured by sintering nano- or submicron SiC powders in a non-oxidising atmosphere at high temperatures. The 10–11 mm size falls into the optimal range for drum (rolling) ball mills, offering an excellent combination of high hardness and moderate density.

Key Size Applications:

0.5–2 mm: Ultra-fine grinding of extremely hard materials
2–8 mm: Preferred media for stirred mills
8–15 mm: Specifically designed for drum ball mills

Manufacturing Process

Pressureless sintering involves submicron β-SiC powder with sintering aids (0.3–3.0 wt% boron and 0.1–1.0 wt% carbon), sintered at 2020–2080°C in inert atmosphere. For 10–11 mm balls, cold isostatic pressing (CIP) is used to create spherical blanks, which are then precision-machined and sintered to ensure high sphericity and uniform density.

Technical Specifications

Parameter	Value / Range	Unit
True Density	>3.15	g/cm³
Hardness (Vickers)	2000–2500	HV
Bending Strength	360–470	MPa
Compressive Strength	>2200	MPa
Fracture Toughness	3.0–5.12	MPa·m¹⁄²
Elastic Modulus	350–380	GPa
Max. Operating Temperature	1600	°C
Thermal Conductivity	95–120	W/m·K

Performance Comparison

Property	Pressureless Sintered SiC	ZrO₂	Al₂O₃	Steel
Density (g/cm³)	>3.15	≈6.0	≈3.95	≈7.8
Vickers Hardness (HV)	2000–2500	1100–1300	≈1800	≈700
Max. Operating Temp. (°C)	1600	400	1000	~300
Fracture Toughness (MPa·m¹⁄²)	3.0–5.12	8.0–10.0	3.0–4.0	—

Industrial Applications

Superhard material grinding: SiC, B₄C, TiC, Si₃N₄, diamond
Mining & metallurgy: Hard ores like quartz and corundum
Electronic & structural ceramics: Non-magnetic and electrically insulating
Chemical & corrosive environments: Stable in strong acids and alkalis
New energy & semiconductor materials: High-purity battery and substrate materials

Selection Guidelines

Consideration	Recommendation
Equipment Match	Drum (rolling) ball mills
Material to be Ground	Hard powders (Mohs ≥7)
Purity Requirements	Products requiring ≥99.5% purity
Impact Severity	Avoid extremely high impact conditions
Operating Temperature	Room temperature up to 1300°C

Important Note: Although SiC is extremely hard, its fracture toughness is relatively low (3–5 MPa·m¹⁄²). Under extremely high-speed collisions or hard impacts, there is a risk of breakage. Optimize rotational speed and ball charge to avoid excessive inter-ball impact.

Quality Standards

Manufactured according to Chinese national standards (GB/T 2480-2022, GB/T 23538-2023) and international standards including ASTM C1327 for Vickers hardness testing.

Core Quality Parameters: