|
Product Details:
|
| Material: | SiC | Composition:SiC: | >85% |
|---|---|---|---|
| Color: | Black | Density: | ≥3.65g/cm3 |
| Max. Service Temp: | 1380℃ | Flexural Strength: | 250MPa |
| Hardness: | ≥84HRA | Water Absorption: | ≤0.2% |
| Abrasion: | < 0.02% | Bending Strength: | ≥290MPa |
| Highlight: | Alumina Ceramic Substrates,Aluminum Nitride Aln Substrates,Silicon Nitride Ceramic Substrates |
||
Product Description
Engineered ceramic substrates form the foundation of modern electronic systems. Alumina (Al₂O₃), Aluminum Nitride (AlN), and Silicon Nitride (Si₃N₄) offer unique combinations of thermal, mechanical, and electrical properties, making them indispensable across power electronics, RF/microwave, and LED applications.
| Property | Al₂O₃ 96% | Al₂O₃ 99.6% | AlN | Si₃N₄ |
|---|---|---|---|---|
| Apparent Density (g/cm³) | 3.7-3.8 | 3.8-3.9 | 3.3 | 3.5 |
| Vickers Hardness (GPa) | 16 | 21 | 11 | 15 |
| Bending Strength (MPa) | 500 | 400 | 320 | 750 |
| Elastic Modulus (GPa) | 340 | 350 | 320 | 300 |
| Thermal Conductivity (W/m·K) | 24 | 28 | 180 | 55 |
| CTE (10⁻⁶/K) | 6.8-8.0 | 6.8-8.5 | 4.7-5.6 | 2.7 |
| Dielectric Strength (kV/mm) | 15 | 10 | 16 | 36 |
| Volume Resistivity (Ω·m) | >10¹² | >10¹² | >10¹² | >10¹² |
| Dielectric Constant | 9.8 | 9.9 | 8.9 | 8.5 |
Alumina provides the optimal balance of performance and affordability, making it the most widely used ceramic substrate material.
Key Advantages:
Excellent cost-to-performance ratio
High mechanical strength and electrical insulation
Good thermal stability and chemical resistance
Typical Applications:
Standard thick-film and thin-film circuits
Heater elements, sensors, and resistor bases
RF shielding and general-purpose insulating components
Customization: Available in 96% to 99.7% purity; thickness from 0.25mm; surfaces from ground to polished; full metallization and complex shaping capabilities.
Aluminum Nitride is the premier choice for thermal management in high-power density applications, offering thermal conductivity rivaling beryllium oxide without associated toxicity concerns.
Key Advantages:
Very high thermal conductivity (180 W/m·K)
Excellent electrical insulation properties
Low coefficient of thermal expansion matching silicon
Critical Applications:
High-power LED arrays and laser diode carriers
Insulated Gate Bipolar Transistor (IGBT) modules
Microwave integrated circuits and high-frequency packages
Processing: Compatible with thick-film and thin-film metallization; available with polished surfaces for fine-line patterning.
Silicon Nitride excels in applications demanding exceptional fracture resistance, thermal shock survival, and long-term mechanical stability under harsh conditions.
Key Advantages:
Exceptional bending strength (750 MPa)
Superior resistance to thermal shock
Outstanding fracture toughness and wear resistance
Demanding Applications:
Automotive and aerospace power modules
Components for deep vacuum and high-vibration environments
Ultra-thin substrates (down to 0.3mm) requiring high structural integrity
Prioritizing Thermal Management? → Select Aluminum Nitride (AlN)
Balancing Performance and Budget? → Choose Alumina (Al₂O₃)
Requiring Maximum Mechanical Durability? → Specify Silicon Nitride (Si₃N₄)
Need technical consultation? Our engineering team can help you select the ideal ceramic substrate material and processing options for your specific electronic circuit, thermal management, or high-reliability application.
Contact Person: Ms. Yuki
Tel: 8615517781293