Product Details:
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Material: | SiC | Composition:SiC: | >98% |
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Color: | Black | Density: | >3.05g/cm3 |
Max. Service Temp: | 1650°C | Flexural Strength: | 380MPa |
Highlight: | Icp Etching Wafer Holder Sic Plate,Wafer Holder Silicon Carbide Plate,Led Industry Sic Plate |
Silicon Carbide (SiC) Trays or plate used as a wafer holder for ICP etching process in LED industry.
Silicon carbide (SiC) is a has excellent thermal conductivity, corrosion resistance, and with low thermal expansion. Silicon carbide is an excellent material for sealing rings and bearings. Silicon carbide trays have excellent corrosion resistance, great wear resistance, great mechanical strength under high temperatures. We supply many sizes of silicon carbide trays as well as other SiC products.
Compound Formula | SiC |
Molecular Weight | 40.1 |
Appearance | Black |
Melting Point | 2,730° C (4,946° F) (decomposes) |
Density | 3.0 to 3.2 g/cm3 |
Electrical Resistivity | 1 to 4 10x Ω-m |
Poisson’s Ratio | 0.15 to 0.21 |
Specific Heat | 670 to 1180 J/kg-K |
Type | Recrystallized SiC | Sintered SiC | Reaction Bonded SiC |
Purity of Silicon Carbide | 99.5% | 98% | >88% |
Max. Working Temp. (`C) | 1650 | 1550 | 1300 |
Bulk Density (g/cm3) | 2.7 | 3.1 | >3 |
Appearance Porosity | <15% | 2.5 | 0.1 |
Flexural strength (MPa) | 110 | 400 | 380 |
Compressive strength (MPa) | >300 | 2200 | 2100 |
Thermal expansion (10^-6/`C) | 4.6 (1200`C) | 4.0 (<500`C) | 4.4 (<500`C) |
Thermal conductivity (W/m.K) | 35~36 | 110 | 65 |
Main characteristics | High temp. High resistance. High purity |
Fracture Toughness | Chemical Resistance |
Contact Person: Ms. Yuki
Tel: 8615517781293