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ED Type Equal Diameter Silicon Carbide Rods - Low Resistance, Long Lifespan Heating Elements for Industrial Furnaces

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ED Type Equal Diameter Silicon Carbide Rods - Low Resistance, Long Lifespan Heating Elements for Industrial Furnaces

ED Type Equal Diameter Silicon Carbide Rods - Low Resistance, Long Lifespan Heating Elements for Industrial Furnaces
ED Type Equal Diameter Silicon Carbide Rods - Low Resistance, Long Lifespan Heating Elements for Industrial Furnaces

Large Image :  ED Type Equal Diameter Silicon Carbide Rods - Low Resistance, Long Lifespan Heating Elements for Industrial Furnaces

Product Details:
Place of Origin: China
Brand Name: KEGU
Model Number: Customizable
Payment & Shipping Terms:
Price: 200-500 yuan/kg
Packaging Details: Strong wooden box for Global shipping
Payment Terms: L/C,D/A,D/P,T/T,Western Union,MoneyGram
Supply Ability: 2,000 pcs/month
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ED Type Equal Diameter Silicon Carbide Rods - Low Resistance, Long Lifespan Heating Elements for Industrial Furnaces

Description
Material: SiC Composition:SiC: ＞98%
Color: Black Density: ≥3.05g/cm3
Max. Service Temp: 1650℃ Flexural Strength: 380MPa
Composition:SiC: ＞85% Density: ≥3.0g/cm3
Max. Service Temp: 1380℃ Flexural Strength: 250MPa
Size: Customized Density: 2.5～2.6 G/cm3
Heat Conduction: 23.26 W/(m·℃) Resistivity: 1000～2000 Ω·mm2/m
Tensile Strength: 39.2～49 MPa Flexural Strength: 70～90 MPa
Density: 2.5~2.6g/cm³ Max. Service Temp.: 1500℃
Flexural Strength: 70-90 MPa Linear Thermal Expansion Coefficient (20-1500℃): 5×10⁻⁶/℃
Electrical Resistivity: 1000~2000Ω·mm²/m
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Type Equal Diameter Silicon Carbide Rods - Low Resistance, Long Lifespan Heating Elements for Industrial Furnaces

ED Type Equal Diameter Silicon Carbide Rods - Low Resistance, Long Lifespan Heating Elements for Industrial Furnaces 0


Description:


The SiC electric heating elements are mainly made of high quality green silion carbide, it's a kind of tubular and non-metallic high temperature Electric Heating Element produced by processing of msaking semifinished product, high-temperature silicification, re-crystallization. ED Series Equal Diameter Silicon Carbide Rods are advanced replacements for traditional thick-end silicon carbide rods. Featuring uniform diameter structure, these rods deliver 30% lower end resistance than traditional models, significantly reducing thermal stress and prolonging service life. Ideal for high-temperature applications up to 1450°C, they excel in energy efficiency with 15-20% power savings.


Typical application:


SiC electric heating element is widely used in high temperature furnaces and other electric heating equipment of magnetic materials, powder metallurgy, ceramics, glass, metallurgy, machinery and other industries.



The physical properties of silicon carbide Rodes:


Specific Gravity 2.6-2.8 g/cm3 Bend Strength >300 kg
Hardne   >9 MOH'S Tensile Strength >150 kg/cm3
Porosity Rate <30% Thermal Radiance 0.85


The linear expansion coefficient, thermal conductivity and specific heat of SiC element change with temperature. And the relative data show as followings:


Temperature

 (℃)

Linear Expansion Cofficient

(10-6m/℃)

Thermal Conductivity

(kcal/Mgr ℃)

Specific Heat

(cal/g ℃)
0 / / 0.148
300 3.8 / /
400 / / 0.255
600 4.3 14-18 /
800 / / 0.294
900 4.5 / /
1100 / 12-16 /
1200 4.8 / 0.325
1300 / 10-14 /
1500 5.2 / /



Temperature and Surface Load of SiC Elements Under Different Atomosphere:


Atomosphere Furnace Temp(℃)

Surface Load

(W/cm2)

 Impact on the Element Solution
Ammonia 1290 3.8 Acting on SiC to form thus decrease SiO2 protective film  Active at dew point
CO2 1450 3.1 Erosion of elements Protecting by quartz tube
tube18%CO 1500 4.0 No action
20%CO 1370 3.8 Adsorbing C grains to act on SiO2 protective film
Halogen 704 3.8 Attacking SiC and decressing SiO2 protective film Protecting by quartz tube
Hydrocarbon 1310 3.1 Adsorbing C grains causes hot pollution Filling with enough air
Hydrogen 1290 3.1 Acting on SiC to form thus decrease SiO2 protective film Active at dew point
Menthane 1370 3.1 Adsorbing C grains causes hot pollution 
N 1370 3.1 Acting with SiC forms SiN insulating layer
Na 1310 3.8 Erosion of elements Protecting by quartz tube
SO2 1310 3.8 Erosion of elements Protecting by quartz tube
Vacuum Atomosphere 1204 3.8

Oxygen 1310 3.8 SiC is oxided

Water

(Different Contents)

 1090~1370 3.1~3.6 Acting on SiC forms hydtate of Sillicon


Tag:

Silicon Carbide Heating Elements,

Sic Heating Elements,

Sic Heater Elements

Contact Details
Shaanxi KeGu New Material Technology Co., Ltd

Contact Person: Ms. Yuki

Tel: 8615517781293

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