| Highlight: | 1625°C Operating Temperature Silicon Carbide Heating Elements,U,W |
||
|---|---|---|---|
| Property | Value / Range |
|---|---|
| Specific Gravity | 2.6-2.8 g/cm³ |
| Bend Strength | >300 kg/cm² |
| Hardness | >9 Mohs |
| Tensile Strength | >150 kg/cm³ |
| Porosity Rate | <30% |
| Radiancy | 0.85 |
| Temperature (°C) | Linear Expansion Coefficient (10⁻⁶/°C) | Heat Conductivity (kcal/m*hr*°C) | Specific Heat (cal/g*°C) |
|---|---|---|---|
| 0 | - | - | 0.148 |
| 300 | 3.8 | - | - |
| 400 | - | - | 0.255 |
| 600 | 4.3 | 14-18 | - |
| 800 | - | - | 0.294 |
| 900 | 4.5 | - | - |
| 1100 | - | 12-16 | - |
| 1200 | 4.8 | - | 0.325 |
| 1300 | - | 10-14 | - |
| 1500 | 5.2 | - | - |
| Atmosphere | Max. Furnace Temp. (°C) | Max. Surface Load (W/cm²) | Effect on Element | Recommended Protection |
|---|---|---|---|---|
| Ammonia (NH₃) | 1290 | 3.8 | Reacts with SiC to form methane, degrading SiO₂ layer | Operate at dew point |
| Carbon Dioxide (CO₂) | 1450 | 3.1 | Attacks SiC | Use quartz tube shield |
| Carbon Monoxide (CO, 18%) | 1500 | 4.0 | Minimal effect | - |
| Carbon Monoxide (CO, 20%) | 1370 | 3.8 | Carbon adsorption affects SiO₂ layer | - |
| Halogen Gases | 704 | 3.8 | Corrodes SiC and destroys SiO₂ layer | Quartz tube shield |
| Hydrocarbons | 1310 | 3.1 | Carbon pickup causes hot spots | Ensure sufficient air flow |
| Hydrogen (H₂) | 1290 | 3.1 | Reacts with SiC, damages SiO₂ layer | Operate at dew point |
| Methane (CH₄) | 1370 | 3.1 | Carbon adsorption leads to hot spots | - |
| Nitrogen (N₂) | 1370 | 3.1 | Forms silicon nitride insulating layer | - |
| Sodium (Na) Vapor | 1310 | 3.8 | Attacks SiC | Quartz tube shield |
| Sulfur Dioxide (SO₂) | 1310 | 3.8 | Attacks SiC | Quartz tube shield |
| Vacuum | 1204 | 3.8 | Stable operation | - |
| Oxygen / Air | 1310 | 3.8 | SiC oxidizes (forms protective SiO₂) | - |
| Water Vapor | 1090-1370 | 3.1-3.6 | Forms silicon hydrates, accelerates aging | - |
Contact Person: Ms. Yuki
Tel: 8615517781293