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Product Details:
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| Material: | SiC | Composition:SiC: | >85% |
|---|---|---|---|
| Color: | Black | Density: | 2.6~2.8g/cm³ |
| Max. Service Temp: | 1500℃ | Size: | Customized |
| Tensile Strength: | >150kg/cm2 | Linear Expansion CoefficientCoefficient (20-1500℃): | 5.2×10⁻⁶/℃ |
| Bend Strength: | >300kg | Radiancy: | 0.85 |
| Porosity Rate: | <30% | Hardness: | >9MOH'S |
| Heat Conductivity: | 10~14Kcal/M Hr℃ | ||
| Highlight: | industrial heating elements,industrial sic heater elements,ed type heating elements |
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| Property | Value | Property | Value |
|---|---|---|---|
| Specific Gravity | 2.6-2.8 g/cm³ | Bend Strength | >300 kg |
| Hardness | >9 MOH'S | Tensile Strength | >150 kg/cm³ |
| Porosity Rate | <30% | Thermal Radiance | 0.85 |
| Temperature (°C) | Linear Expansion Coefficient (10⁻⁶m/°C) | Thermal Conductivity (kcal/Mgr°C) | Specific Heat (cal/g°C) |
|---|---|---|---|
| 0 | / | / | 0.148 |
| 300 | 3.8 | / | / |
| 400 | / | / | 0.255 |
| 600 | 4.3 | 14-18 | / |
| 800 | / | / | 0.294 |
| 900 | 4.5 | / | / |
| 1100 | / | 12-16 | / |
| 1200 | 4.8 | / | 0.325 |
| 1300 | / | 10-14 | / |
| 1500 | 5.2 | / | / |
| Atmosphere | Furnace Temp (°C) | Surface Load (W/cm²) | Impact on the Element | Solution |
|---|---|---|---|---|
| Ammonia | 1290 | 3.8 | Acting on SiC to form thus decrease SiO₂ protective film | Active at dew point |
| CO₂ | 1450 | 3.1 | Erosion of elements | Protecting by quartz tube |
| 18% CO | 1500 | 4.0 | No action | |
| 20% CO | 1370 | 3.8 | Adsorbing C grains to act on SiO₂ protective film | |
| Halogen | 704 | 3.8 | Attacking SiC and decreasing SiO₂ protective film | Protecting by quartz tube |
| Hydrocarbon | 1310 | 3.1 | Adsorbing C grains causes hot pollution | Filling with enough air |
| Hydrogen | 1290 | 3.1 | Acting on SiC to form thus decrease SiO₂ protective film | Active at dew point |
| Methane | 1370 | 3.1 | Adsorbing C grains causes hot pollution | |
| N | 1370 | 3.1 | Acting with SiC forms SiN insulating layer | |
| Na | 1310 | 3.8 | Erosion of elements | Protecting by quartz tube |
| SO₂ | 1310 | 3.8 | Erosion of elements | Protecting by quartz tube |
| Vacuum Atmosphere | 1204 | 3.8 | ||
| Oxygen | 1310 | 3.8 | SiC is oxidized | |
| Water (Different Contents) | 1090-1370 | 3.1-3.6 | Acting on SiC forms hydrate of Silicon |
Contact Person: Ms. Yuki
Tel: 8615517781293