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Reaction-Bonded Silicon Carbide Paddle with 1380°C Long-term Service Temperature, High Load-Bearing Capacity, and Superior Thermal Expansion Match for Semiconductor Wafer Handling

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Reaction-Bonded Silicon Carbide Paddle with 1380°C Long-term Service Temperature, High Load-Bearing Capacity, and Superior Thermal Expansion Match for Semiconductor Wafer Handling

Reaction-Bonded Silicon Carbide Paddle with 1380°C Long-term Service Temperature, High Load-Bearing Capacity, and Superior Thermal Expansion Match for Semiconductor Wafer Handling

Description
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1380°C Long-term Service Temperature RBSiC Cantilever Paddle

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High Load-Bearing Capacity Silicon Carbide Wafer Handling Paddle

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Superior Thermal Expansion Match Reaction-Bonded Silicon Carbide Paddle

Reaction-Bonded Silicon Carbide (RBSiC) Cantilever Paddles: Precision Engineered for Semiconductor Wafer Handling
In the precision-driven environment of semiconductor fabrication, every component within the wafer handling chain must guarantee utmost reliability and dimensional integrity. Cantilever paddles, as the critical interface in automated loading systems, directly impact process yield, throughput, and scalability. Our Reaction-Bonded Silicon Carbide (RBSiC) Cantilever Paddles are engineered to deliver exceptional performance where it matters most—under high temperatures, repeated thermal cycles, and stringent cleanliness requirements.
Superior Stability through Advanced Material Engineering
Manufactured via the reaction-bonding process, our paddles achieve a unique combination of high purity, near-net-shape precision, and exceptional thermo-mechanical properties. This makes them the ideal choice for demanding applications in robotic wafer handling and transfer systems.
Key Performance Data
Property Unit Typical Value / Data
Long-term Service Temperature °C ≤ 1380
Density g/cm³ ≥ 3.02
Apparent Porosity % ≤ 0.1
Flexural Strength MPa 250 (20°C); 281 (1200°C)
Elastic Modulus GPa 332 (20°C); 300 (1200°C)
Thermal Conductivity (1200 °C) W/m*K 45
Coefficient of Thermal Expansion K⁻¹ * 10⁻⁶ 4.5
Mohs Hardness - 9
Acid & Alkali Resistance - Excellent
Core Advantages Enabled by RBSiC
  • Unmatched Dimensional Stability at High Temperature: The reaction-bonded structure ensures minimal deformation and zero creep under sustained thermal load, critical for maintaining precise wafer positioning in furnace processes.
  • High Load-Bearing Capacity & Stiffness: Excellent flexural strength and modulus support high wafer loads reliably, enabling stable handling in batch processing environments.
  • Optimized for Robotic Automation: Designed for seamless integration into automated load ports, transfer robots, and handling systems, ensuring smooth, repeatable, and particle-minimized operation.
  • Superior Thermal Expansion Match: The tailored Coefficient of Thermal Expansion (CTE) closely matches that of silicon wafers and quartz furnace tubes, reducing thermal stress and misalignment risks in processes such as LPCVD, diffusion, and annealing.
Transforming Process Scalability & Operational Efficiency
Integrating our RBSiC cantilever paddles enables tangible advances in both process capability and fab economics:
  • Enable Larger Wafer Processing in Existing Tools: Exceptional cross-sectional stability allows existing furnace tubes to be reliably retrofitted for processing larger wafer diameters, extending the lifecycle of capital equipment.
  • Reduce Particle Contamination: High density and smooth surface finish minimize particle generation and adhesion, directly improving yield in cleanroom-critical applications.
  • Extend Maintenance & Cleaning Cycles: Outstanding resistance to thermal fatigue, oxidation, and chemical exposure significantly prolongs service intervals, reducing downtime and consumable costs.
  • Ensure Process Uniformity: Consistent performance across thermal cycles ensures repeatable wafer placement and heating profiles, supporting uniform film deposition and process control.
Technical Excellence Rooted in Material Properties
The reaction-bonded silicon carbide structure provides an optimal balance of properties essential for wafer handling:
  • High mechanical strength and fracture toughness
  • Excellent thermal conductivity with low thermal expansion
  • Inertness to most process gases and plasma environments
  • Long-term stability in oxidizing and reducing atmospheres up to 1380°C
Ideal for Retrofit & Next-Generation System Design
Whether upgrading existing wafer handling systems for advanced nodes or designing next-generation semiconductor manufacturing equipment, our RBSiC cantilever paddles offer a proven, reliable solution for enhanced precision, scalability, and cost-effectiveness.
Ready to Engineer Precision into Your Wafer Handling Process?
Contact our technical team to discuss your application specifications, request design files, or explore custom-engineered paddle solutions tailored to your toolset and process requirements.

Contact Details
Shaanxi KeGu New Material Technology Co., Ltd

Contact Person: Ms. Yuki

Tel: 8615517781293

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